| PART |
Description |
Maker |
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
Philips Semiconductors
|
| NTE2732A |
Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM
|
NTE[NTE Electronics]
|
| 27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM
|
General Semiconductor
|
| BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM
128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| ST27C1001 |
1024K CMOS UV Erasable PROM
1024K ( 128K X 8 ) CMOS UV ERASABLE PROM
|
ST Microelectronics
STMicroelectronics
|
| WS57C71C-3 WS57C71C-5 WS57C71C-55JI WS57C71C-55J W |
HIGH SPEED 32K x 8 CMOS PROM/RPROM 高2K的8的CMOS胎膜早破/ RPROM
MILITARY HIGH SPEED 32K x 8 CMOS PROM/RPROM
WS57C71C HIGH SPEED 32K X 8 CMOS PROM/RPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
N.A.
ST Microelectronics
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| UPD2732A |
UV Erasable PROM
|
NEC
|
| MCM2716 |
2048 x 8-Bit UV Erasable PROM
|
Motorola
|
| BR24L16FVM-W BR24L16F-W BR24L16FV-W BR24L16FJ-W BR |
2k×8 bit electrically erasable PROM
|
Rohm
|
| M27128A M2764A-25 |
AVDVANCED 64K (8K x 8) UV ERASABLE PROM
|
Intel Corporation
|
