PART |
Description |
Maker |
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107 64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics STMicroelectronics
|
M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36W0R6050T1ZAQE |
64 Mbit (4 Mb 16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 16) PSRAM, multi-chip package
|
意法半导
|
M36W0R6050B1 M36W0R6050B1ZAQE M36W0R6050B1ZAQF M36 |
64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package
|
Numonyx B.V
|
M36W0R604040B0ZAQE M36W0R604040B0ZAQF M36W0R604040 |
64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 16 Mbit (1 Mb 】16) PSRAM, multi-chip package
|
Numonyx B.V
|
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
M58LR128KC785 M58LR256KC785 M58LR256KC M58LR256KC7 |
128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
M58WR016QT80ZB6 M58WR016QT80ZB6E M58WR016QT80ZB6F |
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|