| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| DXT2012P5 DXT2012P5-13 DXT2012P5-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
60V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| 2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A)
Power Transistor (-60V, -3A)
Power Transistor (-60V -3A)
Power Transistor(-60V, -3A)
3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
|
ROHM[Rohm]
|
| 2SC3746 2SA1469 2SA1469S 2SA1469Q 2SC3746R |
60V/5A High-Speed Switching Applications
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | SOT-186 晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一（c）|的SOT - 186
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1289 2SC3253 2SC3253S 2SC3253R 2SA1289R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-220AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
60V/5A High-Speed Switching Applications
|
ETC
SANYO[Sanyo Semicon Device]
|
| BC445 BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor
|
Motorola
|
| FS5VSJ06 FS30UMJ06 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）| TO - 220AB现有
|
Powerex, Inc.
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78
晶体管|晶体管|一对|互补| 60V的五（巴西）总裁| 600毫安一（c）|7
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五（巴西）总裁| 200mA的一（c）|7
|
TT electronics Semelab, Ltd.
|
| GET4870 GET4871 MPS2906A GES2906A GES2904 GES2905A |
UNIJUNCTION TRANSISTOR|5UA I(P)|TO-18VAR
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 350MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 40V的五（巴西）总裁| 600毫安一（c）|2
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 600毫安一（c）|2
UNIJUNCTION TRANSISTOR|2UA I(P)|TO-92 单结晶体管|五成一（规划）|2
|
Cornell Dubilier Electronics, Inc.
Mitel Networks, Corp.
GE Security, Inc.
|
