| PART |
Description |
Maker |
| GS840E18AB-190 GS840E18AT-190I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS840F18AT-10I GS840F18AT-12 GS840F18AT-7.5 GS840F |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
| GS816272CC-333 GS816272CGC-30I GS816272CC-300 GS81 |
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 4.5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256 × 72 35.7的S /双氰胺同步突发静态存储器
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 5 ns, PBGA209
256K x 72 18Mb S/DCD Sync Burst SRAMs 256K X 72 CACHE SRAM, 7.5 ns, PBGA209
|
GSI Technology, Inc.
|
| GS88136BGD-300I GS88132BT-200 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS88132BT-150IV |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 7.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS882V37AB-250 GS882V37AB-250I GS882V37AB-225 GS88 |
9Mb Burst SRAMs
256K x 36 9Mb SCD/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| IDT71V25761 IDT71V25781 IDT71V25781S166PF IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
|
Integrated Device Technology, Inc.
|
| N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR
AMI[AMI SEMICONDUCTOR]
|
| GS88136AD-225 GS88136AT-250I GS88136AD-250I |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 5.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS880V37BGT-333I GS880V37BGT-360I GS880V37BT-360 G |
256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 1.8 ns, PQFP100
|
GSI Technology, Inc.
GSI[GSI Technology]
|
| GS88136BD-300I GS88118BD-300 GS88132BD-300 GS88132 |
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
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