| PART |
Description |
Maker |
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA |
256Mb (2MBank32) Synchronous DRAM
256Mb (2MBank2) Synchronous DRAM 256Mb的（200万?4Bank2）同步DRAM
256Mb (2M??Bank??2) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
| HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| M366S3323DTS M366S3323DTS-C1H M366S3323DTS-C1L M36 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung semiconductor
Samsung Electronic
|
| M377S2950MT3 M377S2950MT3-C1H |
128M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| IBM03164B9C IBM0316809C |
16Mb Synchronous DRAM(16M位同步动态RAM)
16MbMbit x 8 I/O x 2 Bank）Synchronous DRAM(16M位（1Mx 8 I/O x 2 组）同步动态RAM)
|
IBM Microeletronics
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Integrated Silicon Solution, Inc.
|
| IS42VM16100G IS42VM16100G-6BLI |
512K x16Bits x2Banks Low Power Synchronous DRAM
1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 |
2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M52D32162A-7.5BG M52D32162A-10TG |
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
|
Elite Semiconductor Memory Technology, Inc.
|
