| PART |
Description |
Maker |
| IRG4PC30KD IRG4PC30KD-EPBF |
600V UltraFast 8-25 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
28 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IRF[International Rectifier]
Vishay Intertechnology, Inc.
|
| APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 1KV交五（巴西）直| 11A条（丁）|采用TO - 247AD
|
Advanced Power Technology, Ltd.
|
| FDP26N40 FDPF26N40 |
N-Channel MOSFET 400V, 26A, 0.16Ω
N-Channel MOSFET 400V, 26A, 0.16ヘ
|
Fairchild Semiconductor
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFZ34 IRFZ34N |
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
|
IRF[International Rectifier]
|
| 2SK3820 |
N-Channel Power MOSFET 100V 26A 60m Ohm TO-263-2L
|
ON Semiconductor
|
| IXGA30N60C3 IXGH30N60C3 IXGP30N60C3 |
GenX3 600V IGBT
60 A, 600 V, N-CHANNEL IGBT, TO-247AD PLASTIC PACKAGE-3
|
IXYS Corporation
IXYS, Corp.
|
| IXGH20N120BD1 |
40 A, 1200 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
|
IXYS, Corp.
|
| IXSH35N100 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 35A条一（c）|采用TO - 247AD
|
PerkinElmer, Inc.
|
| 25N40L-T47-T 25N40G-T47-T |
400V, 26A N-CHANNEL POWER MOSFET
400V, 26A N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| BR108 BR10 BR1005 BR101 BR1010 BR102 BR104 BR106 |
10A SINGLE - PHASE SILICON BRIDGE 10A条单-相硅
MOSFET N-CH 500V 26A ISOPLUS220
|
Semtech, Corp.
SEMTECH[Semtech Corporation]
|
