| PART |
Description |
Maker |
| APT25GP90BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT11GP60BDQB |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT26GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT40GP60B2DF2 |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT25GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT26GU30SA APT26GU30K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT83GU30B APT83GU30S |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technology
|
| APT65GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
http://
|
| APT45GP120B2DQ2 APT45GP120B2DQ2G |
113 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| 2SK2984 D12356EJ1V0DS00 2SK2984-ZJ 2SK2984-S 2SK29 |
Low voltage 4V drive power MOSFET
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
NEC Corp.
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT35GP120BG |
POWER MOS 7? IGBT
|
Microsemi Corporation
|
