PART |
Description |
Maker |
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http:// SIEMENS A G SIEMENS AG
|
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 4M x 16 Bit 8k EDO DRAM 4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HMD4M64D16EV HMD4M64D16EV-5 HMD4M64D16EV-6 |
32Mbyte(4Mx64) EDO Mode 4K Ref. 3.3V, DIMM 168 pin
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
|
HMD4M64D16E |
32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin 32Mbyte4Mx64)EDO公司模式4K的参考5V的,内存168
|
Hanbit Electronics Co., Ltd.
|
IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
VG2618165DJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72 4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72 4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165TT |
16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 70 ns, PDSO50
|
ELPIDA MEMORY INC
|