PART |
Description |
Maker |
HMD16M32M8EH HMD16M32M8EH-5 HMD16M32M8EH-6 |
64Mbyte (16Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
HMD4M36M3EG |
16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V 16MbyteMx362引脚平价模式,上海药物研究所易都4K的参考5V
|
Hanbit Electronics Co., Ltd.
|
KMM5362205C2W |
2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
|
Samsung Semiconductor
|
HMD1M32M2EG HMD1M32M2EG-45 HMD1M32M2EG-50 HMD1M32M |
4MBYTE(1MX32) EDO MODE, 1K REFRESH, 72PIN SIMM, 5V DESIGN
|
Hanbit Electronics Co.,Ltd
|
HMD1M32M2EG HMD1M32M2EG-60 HMD1M32M2EG-45 |
4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design 4MbyteMx32)EDO公司模式,每1000刷新2Pin上海药物研究所V的设
|
Hanbit Electronics Co.,Ltd. Panasonic Industrial Solutions Hanbit Electronics Co., Ltd.
|
HMF4M32M8GL-90 HMF4M32M8GL-75 HMF4M32M8GL-120 HMF4 |
FLASH-ROM MODULE 16MByte (4M x 32-Bit), 72-Pin SIMM, 5V
|
Hanbit Electronics Co.,Ltd
|
HMD8M36M18 HMD8M36M18G HMD8M36M18G-5 HMD8M36M18G-6 |
32Mbyte(8Mx36) 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
|
http:// SIEMENS AG
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|