| PART |
Description |
Maker |
| MS1251 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| BFR90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technology
|
| 2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi
|
| MRF581A MRF581 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
| MRF5812 MRF5812R1 MRF5812R2 MRF5812R1R2 MSC1319 |
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
| 2N5179 MSC1305 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| MRF914 MSC1325 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| 2N5109 MSC1304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
|
Microsemi Corporation
|
| MRF58108 MRF586 MRF555T MRF553T MRF557T MRF571 MRF |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
http://
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
