| PART |
Description |
Maker |
| 2SK3821 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH3320 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3829 |
High Output MOSFETs
|
SANYO
|
| 2SK3832 |
High Output MOSFETs
|
SANYO
|
| 2SK3833 |
High Output MOSFETs
|
SANYO
|
| 2SJ650 ENN7500 |
High Output MOSFETs
DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC2230 2SC2230A E000696 |
TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS)
From old datasheet system
HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS COLOR TV CLASS B SOUND OUTPUT APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| KTD2061 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE TV/ MONITOR VERTICAL OUTPUT/ DRIVER STAGE/ COLOR TV CLASS B SOUND OUTPUT)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
| 4590R-223K 4590R-563K 4590R-823K 4590-682K 4590-68 |
INDUCTOR HIGH CURRENT 22.0UH 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 56.0UH 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 82.0UH 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 6.8UH 1 ELEMENT, 6.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
High Current Filter Inductors
INDUCTOR HIGH CURRENT 5.6UH 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 1500UH 1 ELEMENT, 1500 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 470.0UH 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 180.0UH 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 18000UH 1 ELEMENT, 18000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
INDUCTOR HIGH CURRENT 680.0UH 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR AXIAL LEADED
INDUCTOR HIGH CURRENT 27000UH
1 ELEMENT, 15000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR
|
API Delevan
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
|
