| PART |
Description |
Maker |
| 2SK3816 |
High Output MOSFETs
|
SANYO
|
| CPH6316 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SK3821 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SJ653 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3817 |
High Output MOSFETs
N-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| 2SJ612 |
Medium Output MOSFETs
|
SANYO
|
| 2SK3416 |
Medium Output MOSFETs
|
SANYO
|
| EC4403C |
Medium Output MOSFETs
|
SANYO
|
| 2SJ632 |
Medium Output MOSFETs
|
SANYO
|
| SCH1305 |
Medium Output MOSFETs
|
SANYO
|
