PART |
Description |
Maker |
IPP50CN10NG IPP50CN10NG10 IPI50CN10NG IPB50CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP08CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
IPP05CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
BSO150N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 15mOhm, 9.1A, LL, dual OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSO052N03S |
OptiMOS2 Power-Transistor Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 5.2mOhm, 17A, LL
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSO300N03S INFINEONTECHNOLOGIESAG-BSO300N03S |
OptiMOS2 Power-Transistor OptiMOS2功率晶体 Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 30mOhm, 7.2A, LL
|
INFINEON[Infineon Technologies AG]
|
BSC119N03S BSC119N03SG Q7042S4292 Q7042-S4292 INFI |
OptiMOS®2 - SuperSO8, SO8, DPAK OptiMOS2 Power-Transistor OptiMOS2功率晶体
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
BSB053N03LPG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
BSF053N03LTG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
IPU07N03LA |
OptiMOS®2 - Power packages OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ?的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员?
|
Infineon Toshiba, Corp.
|
SPP12N50C3 SPI12N50C3 SPA12N50C3 SPB12N50C3 |
Cool MOSPower Transistor 酷马鞍山⑩功率晶体管 for lowest Conduction Losses & fastest Switching COOL MOS⒙ POWER TRANSISTOR Cool MOS⑩ Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|