| PART |
Description |
Maker |
| IPP35CN10NG IPP35CN10NG10 IPD35CN10NG IPB35CN10NG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| BSC022N03 BSC022N03S |
OptiMOS2 Power-Transistor
|
Infineon Technologies A...
INFINEON [Infineon Technologies AG]
INFINEON[Infineon Technologies AG]
|
| IPP06CN10LG |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPP13N03LBG IPP13N03LBG08 |
OptiMOS2 Power-Transistor
|
Infineon Technologies AG
|
| IPU10N03LA Q67042-S4238 IPD10N03LA IPS10N03LA IPF1 |
OptiMOS®2 - Power packages
OptiMOS2 Power-Transistor OptiMOS2功率晶体
30 A, 25 V, 0.0104 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
INFINEON[Infineon Technologies AG]
|
| BSC042N03S |
XTAL CER SMT 7X5 2PAD
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO064N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.4mOhm, 16A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Q67042S4291 BSC094N03S BSC094N03SG Q67042-S4291 |
OptiMOS2 Power-Transistor OptiMOS2功率晶体
OptiMOS®2 - SuperSO8, SO8, DPAK
|
INFINEON[Infineon Technologies AG]
|
| BSF053N03LTG |
OptiMOS2 Power-MOSFET
|
Infineon Technologies AG
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
