| PART |
Description |
Maker |
| K5N1229ACD-BQ12 |
512Mb (32M x16) Muxed Burst, Multi Bank SLC NOR Flash
|
Samsung semiconductor
|
| K8D6316UTM-PC07 K8D6316UTM-PC08 K8D6316UTM-PC09 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LRS1387 |
64M ( X16) Dual Work Boot Block Flash & 8M ( X16) SRAM
|
SHARP
|
| MB84VD23381HJ-70PBS MB84VD23381HJ MB84VD23381HJ-70 |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
SPANSION[SPANSION]
|
| MB84VD23381HJ-70 MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Advanced Micro Devices
|
| MB84SD23280FE-70 MB84SD23280E-70PBS MB84SD23280FA |
64M (X16) FLASH MEMORY 8M (X16) SRAM
|
SPANSION[SPANSION]
|
| LRS1387 |
64M (X16) FLASH 8M (X16) SRAM
|
Sharp Electrionic Components
|
| MB84SF6H6H6L2-70PBS MB84SF6H6H6L2-70 |
3 Stacked MCP (Multi-Chip Package) FLASH & FLASH & FCRAM 128M (X16) Burst FLASH MEMORY & 128M (X16) Page/Burst Mobile FCRAM
|
SPANSION[SPANSION]
|
| M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36 |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V
|
| M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
| MX26L6419TC-10 MX26L6419 |
64M [x16] SINGLE 3V PAGE MODE MTP MEMORY
|
MCNIX[Macronix International]
|
