PART |
Description |
Maker |
NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
NESG270034-T1 NESG270034-AZ NESG270034-T1-AZ NESG2 |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
|
CEL[California Eastern Labs]
|
RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4 NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp. RENESAS[Renesas Electronics Corporation] Renesas Electronics Corporation.
|
NESG270034-AZ NESG270034-T1-AZ |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) npn型硅锗射频晶体管输出功率放大介质 - Pin电源MINIMOLD34 PKG)的
|
California Eastern Laboratories, Inc.
|
NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的)3针奥尔MINIMOLD34包)
|
Duracell California Eastern Laboratories, Inc.
|
THN6501 THN6501E THN6501Z THN6501U THN6501S |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
|
SOLITRON DEVICES INC
|
BFU510 |
NPN SiGe wideband transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
NESG220034 NESG220034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
NESG2101M16-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
NESG3031M14-T3-A NESG3031M14 NESG3031M14-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
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