| PART |
Description |
Maker |
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| 1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Standard Rectifier (trr more than 500ns)
N/A
SILICON POWER RECTIFIER
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| EFM301L EFM302L EFM303L EFM304L EFM305L EFM306L EF |
3 A, 150 V, SILICON, RECTIFIER DIODE
3 A, 600 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere
3 A, 200 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| 1N5235B 1N5234B 1N5251B 1N5246B 1N5240B 1N5230B 1N |
Silicon Z-Diodes for Voltage Stabilization(绋冲??靛?62V锛?ǔ瀹??娴?.0mA???榻?撼浜??绠?
Silicon Z-Diodes for Voltage Stabilization(稳定电压6.8V，稳定电0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电.8V时，稳定电流20mA的的硅齐纳二极管
Silicon Z-Diodes for Voltage Stabilization(稳定电压62V，稳定电.0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电2V，稳定电流二点○毫安的硅齐纳二极管）
Silicon Z-Diodes for Voltage Stabilization(稳定电压18V，稳定电.0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电18V的稳定电.0毫安的硅齐纳二极管）
Silicon Z-Diodes for Voltage Stabilization(稳定电压36V，稳定电.4mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电6V的，稳定电流三点四毫安的硅齐纳二极管
Silicon Z-Diodes for Voltage Stabilization(稳定电压2.8V，稳定电0mA的硅齐纳二极 硅的Z -二极管的电压稳定（稳定电.8V时，稳定电流20mA的的硅齐纳二极管
Silicon Z-Diodes 硅的Z -二极
Silicon Z-Diodes for Voltage Stabilization(稳定电压4.7V，稳定电0mA的硅齐纳二极
From old datasheet system
Silicon Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| MR750RL MR751RL MR752RL MR754RL |
6A 50V Silicon Rectifier
6A 100V Silicon Rectifier
6A 200V Silicon Rectifier
6A 400V Silicon Rectifier
|
ON Semiconductor
|
| SZN5114BTXV SZN5114C SZN5114BS SZN5114CSMS SZN5114 |
360 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
120 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
240 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
260 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
33 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
27 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
270 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
91 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
75 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
220 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
30 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
18 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
51 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
330 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
SOLID STATE DEVICES INC
|
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
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