| PART |
Description |
Maker |
| M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM
AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM
12ns 128K x 8 1Mb asynchronous SRAM
10ns 128K x 8 1Mb asynchronous SRAM
128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32
128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48
128K X 8 STANDARD SRAM, 15 ns, PDSO32
|
GSI[GSI Technology]
GSI Technology, Inc.
|
| M68AW127B M68AW127BL70MC1T M68AW127BL70MC6T M68AW1 |
1Mbit 128K x8 / 3.0V Asynchronous SRAM
CAC 6C 6#16S SKT PLUG
1Mbit 128K x8, 3.0V Asynchronous SRAM 1Mbit28K的8.0V异步SRAM
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| GS70328TS-8IT GS7032 GS70328SJ GS70328SJ-10 GS7032 |
256K Async SRAMs
Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
32K x 8 256Kb Asynchronous SRAM 32K的8 256Kb的异步SRAM
32K x 8 256Kb Asynchronous SRAM
|
GSI[GSI Technology]
Electronic Theatre Controls, Inc.
|
| HM62W16255HCTTI-12 HM62W16255HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| HM62W4100HCJP-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
| M68AW256ML70ZB6 M68AW256ML55ND1 M68AW256ML55ND1E M |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM
256K X 16 STANDARD SRAM, 55 ns, PDSO44
256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M68AW128ML55ND6F M68AW128ML70ZB6T M68AW128M M68AW1 |
128K X 16 STANDARD SRAM, 70 ns, PDSO44
2兆位28K的16.0V异步SRAM
BACKSHELL
2 Mbit (128K x16) 3.0V Asynchronous SRAM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
