PART |
Description |
Maker |
GS73024B-15I GS73024B GS73024B-10 GS73024B-10I GS7 |
3Mb28K x 24Bit)Asynchronous SRAM(3M位(128K x 24位)异步静态RAM) 128K X 24 3MB ASYNCHRONOUS SRAM 128KX 24 3MB的异步SRAM 128K X 24 3MB ASYNCHRONOUS SRAM 128K的X 24 3MB的异步SRAM
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List of Unclassifed Manufacturers ETC[ETC] GSI Technology Electronic Theatre Controls, Inc.
|
M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
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GS71024T-8T GS71024T-10T GS71024T-10IT GS71024U-10 |
8ns 64K x 24 1.5Mb asynchronous SRAM 1.5Mb4K x 24Bit)Asynchronous SRAM(1.5M位(64K x 24位)异步静态RAM) 即:1.5MB4K的x 24位)异步SRAM50万位4K的24位)异步静态RAM)的 x24 SRAM x24的SRAM
|
GSI Technology, Inc. Electronic Theatre Controls, Inc.
|
R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit) Memory>Fast SRAM>Asynchronous SRAM
|
SRAM Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
AS7C256A AS7C256A-10JC AS7C256A-15JCN AS7C256A-15J |
IC,AS7C256A-10TCN,TSOP-28 ASY SRAM,10NS,32K X 8,5V 5V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 20 ns, PDSO28 SRAM - 5V Fast Asynchronous
|
ALLIANCE MEMORY INC Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
|
GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit)Asynchronous SRAM(8M位(256K x 32位)异步静态RAM) 8MB的(256 × 32位)异步SRAM00万位56K × 32位)异步静态RAM)的 256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
M68AW031A M68AW031AM70NS6U |
256 KBIT (32K X8) 3.0V ASYNCHRONOUS SRAM 256 Kbit (32K x8) 3.0V Asynchronous SRAM CAC 6C 6#16S PIN PLUG
|
ST Microelectronics 意法半导
|
GS74108AX-7 GS74108AX-7I GS74108AJ-7I GS74108ATP-1 |
7ns 512K x 8 4Mb asynchronous SRAM 10ns 512K x 8 4Mb asynchronous SRAM
|
GSI Technology
|
HM62W8511HCJPI-12 |
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas
|
M68AW256DL70ZB6T M68AW256DL70ZB1T M68AW256DL55ND1T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位56K × 16.0V异步SRAM 4 Mbit (256K x16) 3.0V Asynchronous SRAM 4兆位256K × 16.0V异步SRAM
|
意法半导 STMicroelectronics N.V.
|
GS71208TP-8T GS71208TP-8 |
8ns 128K x 8 1Mb asynchronous SRAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32 0.400 INCH, TSOP2-32
|
GSI Technology, Inc.
|
IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256 122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144 HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
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Integrated Device Technology, Inc. IDT
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