| PART |
Description |
Maker |
| BC849A BC857 BC848 BC860 BC859 BC847 BC850 BC856 B |
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
SOT23 NPN SILICON PLANAR 采用SOT23 NPN硅平
High Speed CMOS Logic Dual Monostable Multivibrators with Reset 16-SOIC -55 to 125 高速CMOS逻辑可复位双重单稳态多谐振荡器 SOIC-16封装 工作温度55℃_125
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http://
Unknow
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
Diodes
|
| MAX9015 MAX9015A MAX9015AEKA-T MAX9016 MAX9016A MA |
SOT23 Dual Precision 1.8V Nanopower Comparators With/Without Reference
SOT23 / Dual / Precision / 1.8V / Nanopower Comparators With/Without Reference
SOT23, Dual, Precision, 1.8V, Nanopower Comparators With/Without Reference COMPARATOR, 10000 uV OFFSET-MAX, 28000 ns RESPONSE TIME, PDSO8
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| KVX2162 KVX2301 KVX2201-23-4 KVX3201A-23-3 KVX3201 |
SURFACE MOUNT VARACTOR DIODES Wide Bandwidth SOT-23 Hyperabrupt TM
L BAND, 50 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 12 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
L BAND, 29 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
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Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
| MAX9018A MAX9018B MAX9015A MAX9017B MAX9017A MAX90 |
"SOT23, Dual, 1.8V, Nanopower, Comparator With 1% Reference (Open- Drain)"
"SOT23, Dual, 1.8V, Nanopower, Comparator With 1.75% Reference (Open- Drain)"
"SOT23, Single, 1.8V, Nanopower, Comparator With 1% Reference (Push/Pull)"
"SOT23, Dual, 1.8V, Nanopower, Comparator With 1.75% Reference (Push/ Pull)"
" SOT23, Dual, 1.8V, Nanopower, Comparator With 1% Reference (Push/Pull)"
" SOT23, Single, 1.8V, Nanopower, Comparator With 1% Reference (Open-Drain)"
"SOT23, Dual, 1.8V, Nanopower Comparators with Open- Drain Output"
"SOT23, Dual, 1.8V, Nanopower Comparators with Push-Pull Output"
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Maxim
|
| 4AE11 |
Silicon NPN/PNP Triple Diffused(三倍扩散NPN/PNP晶体
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
|
Hitachi,Ltd.
Renesas Technology / Hitachi Semiconductor
|
| 5432DM 5439DM 5430FM 5425DM 5475DM 5422DM 54163/BE |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Quad 2-input NAND Gate
Dual 4-input NOR Gate
4-Bit D-Type Latch
Dual 4-input NAND Gate
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits 8声道，数字复接器
|
Rectron Semiconductor
|
| 1M1409 1M5474B 1M5139B 1M5463B |
27 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
6.8 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
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|
| BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
VHF variable capacitance double diodes 甚高频双可变电容二极
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PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)
From old datasheet system
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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