PART |
Description |
Maker |
HY29F800ATT-55 HY29F800ATT-55I HY29F800ATG-55 HY29 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
HYNIX[Hynix Semiconductor]
|
HY29F800 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
Hynix Semiconductor
|
29F800 MX29F800TMC-12 MX29F800BMC-90 MX29F800BTC-9 |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd. http://
|
KM23C8100DET KM23C8100ET |
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
EDI8F81026C |
1 Megabit x 8 Static RAM CMOS, Module(1Mx8 CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
HY29F080 HY29F080G12 HY29F080G70 HY29F080G90 HY29F |
8 Megabit (1M x 8)/ 5 Volt-only/ Flash Memory 8 Megabit (1M x 8), 5 Volt-only, Flash Memory IC,EEPROM,NOR FLASH,1MX8,CMOS,TSOP,40PIN,PLASTIC From old datasheet system
|
HYNIX[Hynix Semiconductor]
|
KM23V8000D |
8M-Bit (1Mx8) CMOS Mask ROM(8M(1Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
S29GL016A S29GL016A100BAI010 S29GL016A100BAI012 S2 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
|
SPANSION
|
AT52BR1664A AT52BR1664AT AT52BR1664A-90CI AT52BR16 |
16-megabit Flash 4-megabit SRAM Stack Memory
|
ATMEL Corporation
|
EM39LV088 EM39LV088-90H EM39LV088-90D EM39LV088-90 |
8M Bits (1Mx8) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|