| PART |
Description |
Maker |
| IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4
18Mb Pipelined DDR垄芒II SRAM Burst of 4
|
Integrated Device Technology
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| GS8160ZV18CT-333I GS8160ZV36CGT-333I GS8160ZV18CGT |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 4.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 4.5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5 ns, PQFP100
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| GS8162Z18BB-200 GS8162Z36BB-200 GS8162Z18BB-150 GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| GS8162Z72CC-150 GS8162Z72CC-333I GS8162Z72CC GS816 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8160Z18 GS8160Z36T GS8160Z36T-133 GS8160Z36T-150 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
ETC
|
| GS8160ZV18CT-333 GS8160ZV18CT-333I GS8160ZV18CT-30 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
36-Mbit QDR™-II SRAM 2-Word Burst Architecture
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Pipelined SRAM with NoBL™ Architecture
4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM
256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc.
Electronic Theatre Controls, Inc.
|
| CY7C1305BV18-167BZC CY7C1307BV18-167BZC CY7C1305BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
| CY7C1303BV2512 CY7C1303BV25-167BZC |
18-Mbit Burst of Two-Pipelined SRAM with QDR? Architecture
|
Cypress Semiconductor
|
| CY7C1302V25 7C1302V25 |
9-Mb Pipelined SRAM with QDR?Architecture
From old datasheet system
|
Cypress
|
