| PART |
Description |
Maker |
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NC60HD STGB10NC60HD GB10NC60HD GP10NC60HD |
N-channel 600V - 10A - TO-220 - D2PAK Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGB10NB60S STGB10NB60ST4 STGP10NB60S_05 GB10NB60S |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGP7NB60FD STGB7NB60FD STGB7NB60FDT4 |
N-CHANNEL 7A 600V TO-220/D2PAK POWERMESH IGBT
N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT N沟道A - 600V 220 / D2PAK封装PowerMESHIGBT
(STGP7NB60FD / STGB7NB60FD) N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH IGBT
14 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| STP22NM60 STB22NM60 STB22NM60-1 STF22NM60 STW22NM6 |
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmeshPower MOSFET
N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET N沟道600V 0.19欧姆- ⑩第22A TO-220/FP/D2PAK/I2PAK/TO-247的MDmesh功率MOSFET
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| STP10NB60SFP STGP10NB60SFP |
N-CHANNEL 10A - 600V - TO-220FP PowerMesh?IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A 600V TO-220 POWERMWSH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STGP10NB60SDFP |
20 A, 600 V, N-CHANNEL IGBT, TO-220AB
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STP12NM60N STF12NM60N STB12NM60N-1 STW12NM60N STB1 |
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.35楼? - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.35ヘ - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| GB3NB60KD GD3NB60K GP3NB60K GP3NB60KD GP3NB60KDFP |
N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT
N-CHANNEL 600V 3A TO-220/TO-220FP/DPAK/D2PAK POWERMESH IGBT
|
ST Microelectronics
|
| STGB7NB60MDT4 STGP7NB60MD |
N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT
|
ST Microelectronics
|
| STGB10NB37LZ_01 STGB10NB37LZ STGB10NB37LZ01 STGB10 |
N-CHANNEL CLAMPED 10A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 10A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMesh TM IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
