| PART |
Description |
Maker |
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| CS5505 CS5508 CS5507 CS5506 CS5506-AP CS5508-AP CS |
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS 低功6位和20A / D转换
VERY LOW POWER 16BIT AND 20 BIT A/D CONVERTERS 低功16位和20位A / D转换
|
Cirrus Logic, Inc.
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AK4563A AK4563AVF |
Low Power 16bit 4ch ADC & 2ch DAC with ALC
Low Power 16bit 4ch ADC & 2ch DAC with ALC 低功6通道ADC
|
Asahi Kasei Microsystems Co.,Ltd
Asahi Kasei Microsystems Co., Ltd.
|
| K6F4016R6DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016U4EFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| K4S64163LH-RE K4S64163LH-RBE K4S64163LH-N K4S64163 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| A64S06162AG-70UF A64S06162A A64S06162A-70U A64S061 |
16M(1M x 16bit) Normal mode & Page mode with Deep Power Down Static Random Access Memory
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| TB62708N EE08582 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER
From old datasheet system
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS
|
Toshiba Semiconductor
|
