| PART |
Description |
Maker |
| W9864G6IH10 |
1M × 4BANKS × 16BITS SDRAM
|
http://
|
| IS42VM16160E |
4M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42RM16400K |
1M x 16Bits x 4Banks Mobile Synchronous DRAM
|
ISSI
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| EM639165 EM639165TS-8L EM639165TS-75 EM639165TS-75 |
8Mega x 16bits SDRAM
|
Etron Technology Inc.
ETRON[Etron Technology Inc.]
ETRON[Etron Technology, Inc.]
|
| BR93LC46RFJ-W BR93LC46RF-W BR93LC46-W BR93LC46FJ-W |
64×16bits serial EEPROM
64】16bits serial EEPROM
6416bits serial EEPROM
|
ROHM[Rohm]
|
| SN8P04XX SN8P0404K SN8P0434S SN8P0406P |
OPT ROM:4096 16bits / RAM:128 8bits
OPT ROM:4096 16bits , RAM:128 8bits
|
SONIX Technology Co., Ltd.
|
| TC58FVT400FT-10 TC58FVT400FT TC58FVB400 TC58FVT400 |
4-MBIT (512K * 8 BITS / 256K * 16BITS)CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY62LF16804B-C HY62LF16804B-I |
High speed, super low power and 8Mbit full CMOS SRAM organized as 512K words by 16bits
|
HYNIX
|
