| PART |
Description |
Maker |
| EM484M1644VTC-6F EM481M1644VTC-6FE EM482M1644VTC-6 |
64Mb (1M×4Bank×16) Synchronous DRAM
64Mb (1M】4Bank】16) Synchronous DRAM
|
Eorex Corporation
|
| EM48BM3244VTA-7FE EM482M3244VTA-6F |
64Mb (512K×4Bank×32) Synchronous DRAM
|
Eorex Corporation
|
| HY5V62CF-S HY5V62CF-7 HY5V62CF |
SDRAM - 64Mb
4 BANKS X 512K X 32BIT SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
| HYM71V8635BT6 HYM71V8635BT6-H |
8Mx64|3.3V|K/H|x4|SDR SDRAM - Unbuffered DIMM 64MB
8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| HY57V28162 HY57V281620ELT HY57V281620ELT-5 HY57V28 |
SDRAM - 128Mb
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O 8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| M366S3323DTS M366S3323DTS-C1H M366S3323DTS-C1L M36 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung semiconductor
Samsung Electronic
|
| H57V2562GTR-50I H57V2562GTR-50J H57V2562GTR-60I H5 |
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
|
Hynix Semiconductor
|
| HSD8M32F4V-10 HSD8M32F4V-10L HSD8M32F4V-12 HSD8M32 |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| HMD32M64D8A-10 HMD32M64D8A-10L HMD32M64D8A-12 HMD3 |
Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
Hanbit Electronics Co.,...
|
| HSD16M64D8A HSD16M64D8A-10 HSD16M64D8A-10L HSD16M6 |
Synchronous DRAM Module 128Mbyte (16Mx64bit),DIMM based on 16Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM
128Mb (2MBank6) Synchronous DRAM 128Mb的（200万Bank6）同步DRAM
128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
