PART |
Description |
Maker |
6N60L-BTA3-R 6N60-BTA3-R 6N60L-BTA3-T 6N60-BTA3-T |
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 六点二安培,600/650伏特N通道MOSFET
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司
|
5N60L-X-TA3-T 5N60L-X-TM3-T 5N60G-X-TA3-T 5N60L-X- |
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
1N60-TA3-T 1N60-TF3-T 1N60-TM3-T 1N60L-TN3-T 1N60 |
1.2 Amps, 600 Volts N-CHANNEL MOSFET 一点二安培00伏特N通道MOSFET
|
??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
8N60L-X-TA3-T 8N60G-X-T2Q-T 8N60G-X-TA3-T 8N60L-X- |
7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
NTB90N02 NTB90N02T4 NTP90N02 |
Power MOSFET 90 Amps / 24 Volts TV 18C 14#22D 4#8(TWINAX) PIN 90 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 90 Amps, 24 Volts Power MOSFET 90 Amps 24 Volts
|
ONSEMI[ON Semiconductor]
|
MTY25N60E-D |
Power MOSFET 25 Amps, 600 Volts
|
ON Semiconductor
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
SPD54151 SPD5415SMSTXV SPD5417SMSTXV SPD5420SMSTXV |
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 50 V, SILICON, RECTIFIER DIODE 3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 200 V, SILICON, RECTIFIER DIODE 3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc Solid State Devices, Inc.
|
SHF1406SMS SHF1402SMS SHF1403SMS SHF1404SMS SHF140 |
40 AMPS 200- 600 VOLTS 30 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDA47 |
600 AMPS 35 VOLTS MATCHED POWER SCHOTTKY DIDE ARRAY
|
SSDI[Solid States Devices, Inc]
|