| PART |
Description |
Maker |
| M27C256B-12XF1 |
256 Kbit (32Kb x 8) EPROM, 5V, 120ns
|
SGS Thomson Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48T35AV-10MH1 M48T35AV-10MH1E M48T35AV-10MH1F M48 |
256 KBIT (32KB X8) TIMEKEEPER SRAM
|
ST Microelectronics
|
| M48T35AV M48T35AV-10MH1 M48T35AV-10MH1TR M48T35AV- |
256 Kbit 32Kb x8 TIMEKEEPER SRAM 256千位2KB的SRAM x8计时
ER 5C 5#16 PIN PLUG
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27C256B-15XF1TR M27C256B-15XF6X M27C256B-15XF7TR |
CAP 0.1UF 50V 20% Z5U DIP-2 TUBE 256千位（的32KB × 8）紫外线存储器和OTP存储
ER 2C 2#12 SKT RECP LINE 256千位（的32KB × 8）紫外线存储器和OTP存储
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM 256千位（的32KB × 8）紫外线存储器和OTP存储
CAP 100PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 2200UF 450V ELECT SCREW TERM
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:35VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:210000uF RoHS Compliant: Yes
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:75VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:200000uF RoHS Compliant: Yes
ER 14C 14#16 SKT RECP BOX
TVS ARRAY, MULTIGUARD 5.6V 2 ELEMENTTVS ARRAY, MULTIGUARD 5.6V 2 ELEMENT; Voltage, varistor at 1mA:8.5V; Voltage, varistor at 1mA min:6.8V; Voltage, varistor at 1mA max:10.2V; Energy, transient:50J; Current, peak 8/20us max:15A;
ER 1C 1#4 PIN RECP WALL
CAP 10PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
ER 4C 2#16 2#12 PIN RECP WALL
CAP 820PF 50V 2% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 100PF 200V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 100PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 100PF 100V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 8.2PF 100V /-0.5PF NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 8.2PF 50V /-0.25PF NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 91PF 50V 2% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 100PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
PWR SPLY LINEAR SINGLE 12V@10.2A
HOLDER CIRCUIT BOARDS ESD SAFE
Mounting Bracket; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
CAP 8.2PF 50V /-0.5PF NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
SERV SWITCH USB COAX CPU CABLES 75 FT
CONNECTOR ACCESSORY
256 KBIT (32KB X8) UV EPROM AND OTP EPROM
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
|
Samsung Semiconductor Co., Ltd.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
|
EEPROM
NIC Components, Corp.
PLX Technology, Inc.
|
| M27C516 |
512Kbit (32Kb x16) OTP EPROM(512Kb OTP EPROM)
|
意法半导
|
| C30997-050 C30997-250 |
512 KBIT (64KB X8) UV EPROM and OTP EPROM 光电
|
TE Connectivity, Ltd.
|
| M27C1001-10F1 |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM
|
STMicroelectronics
|
| M27C512-45XF6 M27C512 M27C512-10B1 M27C512-10B3 M2 |
512 Kbit (64K x8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M4T28-BR12SH M4T32-BR12SH |
5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER庐 SRAM
5 V, 256 Kbit (32 Kb x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| 27C512-120 M27C512-12B M27C512-12B1TR M27C512-12B1 |
512 Kbit (64Kb x8) UV EPROM and OTP EPROM
512 Kbit 64Kb x8 UV EPROM and OTP EPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
