| PART |
Description |
Maker |
| BDX88C BDX87C -BDX87C |
Complemetary Silicon Power Darlington Transistors(???杈炬?椤挎?浣??)
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| BDW93B BDW93C |
Complemetary Silicon Power Darlington Transistors(互补硅功率达林顿晶体
|
意法半导
|
| BDX53A BDX54B BDX54C |
Complemetary Silicon Power Darlington Transistors(功率达林顿晶体管)
|
意法半导
|
| MJE340 MJE350 4171 |
From old datasheet system
Complemetary Silicon Power Transistors(互补硅功率晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| TDA4605 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistors
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MC14411P MC14411L MC14411 |
Low-Power Complemetary Mos
CMOS LSI 1.843 MHz, OTHER CLOCK GENERATOR, PDIP24
|
Motorola, Inc
MOTOROLA[Motorola Inc]
Motorola Mobility Holdings, Inc.
|
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| PBY277 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3 |
Silicon-Power Rectifiers
Silicon-Power Rectifiers 12 A, 200 V, SILICON, RECTIFIER DIODE, DO-4
Silicon-Power Rectifiers 12 A, 800 V, SILICON, RECTIFIER DIODE, DO-4
Replacement with:PBY272R
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| BYP54-800 BYP53 BYP53-100 BYP53-150 BYP53-200 BYP5 |
25A Silicon Power Rectifier Diode 25 A, 800 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 500 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 75 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 150 V, SILICON, RECTIFIER DIODE
25 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 400 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
|
ZETEX PLC
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes, Inc.
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
