| PART |
Description |
Maker |
| 2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP
VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| MGA-683P8-BLKG MGA-683P8-TR1G |
Low Noise And High Linearity Active Bias Low Noise Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| NE434S01_98 NE434S01 NE434S01-T1 NE434S01-T1B NE43 |
C BAND SUPER LOW NOISE HJ FET
|
NEC[NEC]
|
| NE325S01 NE325S01-T1 NE325S01-T1B |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE3514S02 |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
CEL
|
| NE429M01 NE429M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
|
| NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511 |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
CEL[California Eastern Labs]
|
| NE32500N NE32500 NE32500M |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
|
CEL[California Eastern Labs]
|
| NE3503M04-T2 NE3503M04-T2B |
C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| LT1993IUD-2 LT1993CUD-2 |
800MHz Low Distortion, Low Noise Differential Amplifi er/ADC Driver (AV = 2V/V)
|
Linear Technology
|
| LTC6404IUD-1-PBF LTC6404IUD-1-TRPBF LTC6404IUD-2-P |
600MHz, Low Noise, High Precision Fully Differential Input/Output Amplier/Driver; Package: QFN; No of Pins: 16; Temperature Range: 0°C to 70°C OP-AMP, 2000 uV OFFSET-MAX, 500 MHz BAND WIDTH, PQCC16
600MHz, Low Noise, High Precision Fully Differential Input/Output Amplifi er/Driver
|
Linear Technology, Corp.
|
