| PART |
Description |
Maker |
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| NESG210833 NESG210833-A NESG210833-T1B NESG210833- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| NESG220034-A NESG220034-T1 NESG220034-T1-A NESG220 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| 2SC5761 2SC5761-T2 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NEC[NEC]
|
| THN405Z |
SiGe NPN Transistor
|
AUK corp
|
| THN6601B |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN6201U THN6201 THN6201E THN6201KF THN6201Z THN62 |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN5601B |
SiGe NPN Transistor
|
AUK corp
|
