| PART |
Description |
Maker |
| MTB50N06EL |
TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MTB75N03HDL MTB75N03HDL_D ON2451 |
TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTP75N03HDL MTP75N03HDL_D ON2641 |
OSCILLATORS 100PPM -10 70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system
TMOS POWER FET 3.0 AMPERES 600 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| BUK9628-100A BUK9528-100A NXPSEMICONDUCTORS-BUK962 |
TrenchMOS transistor Logic level FET 49 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
