PART |
Description |
Maker |
2SJ557 2SJ557-T2B 2SJ557-T1B |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC[NEC]
|
UPA1911ATE UPA1911A UPA1911ATE-T2 UPA1911ATE-T1 |
Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA507TE-T2 |
Pch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Pch enhancement-type MOS FET
|
NEC[NEC]
|
UPA1817 UPA1817GR-9JG UPA1817GR-9JG-E2 |
Pch enhancement MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC Corp.
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
UPA1970TE UPA1970TE-T2 |
Nch enhancement type MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET MOS Field Effect Transistor SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9 |
Nch enhancement type power MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
2SK1384 2SK1384R |
N-CHANNEL ENHANCEMENT TYPE MOS-FET
|
Fuji Electric List of Unclassifed Manufacturers
|