| PART |
Description |
Maker |
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLM1415-6F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM1414-3F |
Internally Matched Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| MGFC36V3742A MGFC36V3742A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFC36V7785A |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V586712 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFK38A3745 MGFK38A374511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V4450A11 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| TIM1213-4L |
Low Distortion Internally Matched Power GaAs FETs (X, Ku-Band)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MGFC42V6472 |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
6.4-7.2 GHz Band 16W Internally Matched GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
