PART |
Description |
Maker |
THM321020S-10 THM321020S-80 THM321020SG-10 THM3210 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1048576 WORDS x 32 BIT DYNAMIC RAM MODULE 1,048,576 WORDS x 32 BIT DYNAMIC RAM MODULE 1/048/576 WORDS x 32 BIT DYNAMIC RAM MODULE
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity 8M x 36 Bit DRAM Module with Parity 8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块) From old datasheet system 16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
HYM328020GD-60 HYM328020GD-50 |
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72 8M x 32 Bit DRAM Module (SO-DIMM) -8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO From old datasheet system 2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72 DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD. Oki Electric Industry Co., Ltd.
|
MC-4216LFC721 |
3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块) 3.3 V工作电压800万字72位动态内存模块(工作电压.3伏的动态内存模块) 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(宸ヤ??靛?涓?.3V?????AM妯″?)
|
NEC, Corp. NEC Corp.
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MK31VT864A-8YC |
8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字64位同步动态RAM模块) 8388608 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(8M字4位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
HYB514400BJ-50- Q67100-Q756 Q67100-Q973 HYB514400B |
RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
TC511402AJ-60 TC511402AP-60 TC511402ASJ-60 TC51140 |
1,048,576 x 4 BIT DYNAMIC RAM 1048576 x 4 BIT DYNAMIC RAM Darlington Array IC; Transistor Polarity:NPN; Number of Transistors:7; Collector Emitter Voltage, Vceo:1.3V; Package/Case:16-DIP
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http:// Toshiba Semiconductor Toshiba Corporation
|
HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116 |
4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 4M x 4-Bit Dynamic RAM 4米4位动态随机存储器
|
http:// SIEMENS AG
|
HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM) 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
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