| PART |
Description |
Maker |
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRFF220 FN1889 |
3.5A/ 200V/ 0.800 Ohm/ N-Channel Power MOSFET
3.5A 200V 0.800 Ohm N-Channel Power MOSFET
3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFF9220 FN2288 |
-2.5A/ -200V/ 1.5 Ohm/ P-Channel Power MOSFETs
From old datasheet system
-2.5A, -200V, 1.5 Ohm, P-Channel Power MOSFETs
|
Intersil Corporation
|
| FRS9230R FRS9230D FRS9230H |
4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs 4 A, 200 V, 1.32 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FRM240R FRM240D FRM240H |
16 A, 200 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs
16A/ 200V/ 0.24 Ohm/ Rad Hard/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A
200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FRM9230D FRM9230H FRM9230R FN3263 |
4A/ -200V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFETs
4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RM12F0.0118OHMCT-LF RM12F0.0113OHMCT-LF RM12F0.011 |
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0118 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0113 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0115 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.011 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0102 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0121 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.25 W, 1 %, 400 ppm, 0.0107 ohm, SURFACE MOUNT, 1206 CHIP, ROHS COMPLIANT
|
Cal-Chip Electronics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| APT20M38SVR APT20M38SVRG |
200V 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
|
