| PART |
Description |
Maker |
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| 2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA
晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁| 1A条一c）|52AA
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA
Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
| FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
PNP Epitaxial Darlington Transistor
NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| CZTA77 |
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| M54583 M54583P M54583PNBSP |
From old datasheet system
M54583P Darlington Transistor Array
8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electronics America Inc
Mitsubishi Electric Semiconductor
|
| 2SB1282 |
Darlington Transistor(± 4A PNP)
Darlington Transistor(【 4A PNP)
Darlington Transistor( 4A PNP)
Darlington Transistor(4A PNP) 达林顿晶体管（【第4A进步党）
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Shindengen Electric Manufacturing Co., Ltd.
|
| GMPSA14 |
The GMPSA14 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE.
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR
TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| ZXTN04120HK ZXTN04120HKTC ZXTN04120HK-15 |
Discrete - Bipolar Transistors - Darlington Transistors
120V NPN MEDIUM POWER DARLINGTON TRANSISTOR IN TO252
|
Diodes Incorporated
|
