PART |
Description |
Maker |
K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M- |
SSR H/S IO 230V 20A 4-32VDC SSR H/S ZS 600V 70A 4-32VDC 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存 ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存 DSUB 25 M PCR/A G
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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MC-4R256FKE6D-845 MC-4R256FKE6D MC-4R256FKE6D-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
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ELPIDA MEMORY INC Elpida Memory, Inc. ELPIDA[Elpida Memory]
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MC-4R256FKE8D-845 MC-4R256FKE8D MC-4R256FKE8D-653 |
190730050 Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
MC-4R256CEE6C-845 MC-4R256CEE6B MC-4R256CEE6B-653 |
Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT 128M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184
|
http:// NEC[NEC] NEC Corp.
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UPD46128512-E10X UPD46128512-E11X UPD46128512-E12X |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC
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UPD46128512F9-CR2 UPD46128512-X UPD46128512-E11X U |
128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 128兆位CMOS移动指明内存800万字6位温度范
|
NEC, Corp. NEC Corp.
|
K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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M6MGD137W3 M6MGD137W33TP |
The M6MGD137W33TP is a Stacked micro Multi Chip
Package (S- mMCP) that contents 128M-bit Flash memory
and 32M-bit Mobile RAM in a 52-pin TSOP.
|
RENESAS
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HM5225165BTT-75 HM5225405BTT-75 HM5225805BTT-75 HM |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ??16-bit ??4-bank/8-Mword ??8-bit ??4-bank /16-Mword ??4-bit ??4-bank PC/133, PC/100 SDRAM 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz4 Mword16位4-bank/8-Mword位4银行/ 16 Mword4位4银行PC/133,电 100内存 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位银行PC/133,电 100内存 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM 256M LVTTL接口SDRAM33 MHz/100 MHz Mword16位-bank/8-Mword位银行/ 16 Mword位银行PC/133,电 100内存 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Ultra-High-Precision SOT23 Series Voltage Reference POT 5K OHM 9MM HORZ NO BUSHING Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Socket; Insert Arrangement:18-30 Circular Connector; No. of Contacts:11; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:18-11 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM POT 20K OHM 9MM HORZ NO BUSHING 256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank /16-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc. http://
|
HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs 64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
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Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|