| PART |
Description |
Maker |
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NE650R279A NE650R279A-T1 |
0.2 W L, S-BAND POWER GaAs MES FET 0.2册，S波段功率GaAs场效应晶体管
0.2 W L / S-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MGF1954A |
Microwave Power MES FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| SGM2014AN SGM2014 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| NES2427P-45 |
45 W S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
|
| SGM2016AN |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| SGM2014AM |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| NES1823P-140 |
140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| 3SK165A |
GaAs N-channel Dual Gate MES FET
From old datasheet system
|
Sony
|
| SGM2016AN SGM2016 |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
