| PART |
Description |
Maker |
| MGFC36V6472A |
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC38V6472_97 MGFC38V6472 MGFC38V647297 |
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V3642_98 MGFC44V3642 MGFC44V364298 |
3.6-4.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V6472_97 MGFC44V6472 MGFC44V647297 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC39V6472A C396472A |
6.4 - 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
http://
Mitsubishi Electric Semiconductor
|
| MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BFP93 BFP93A Q62702-F1144 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-253
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPB-2026Z |
1.7-2.2GHz 2W InGaP Amplifier
|
SIRENZA MICRODEVICES
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
