| PART |
Description |
Maker |
| ESLB-P245BA ESLB-P245BA-2 ESLB-P245BA-1 |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V7785A_04 MGFC42V7785A MGFC42V7785A04 |
7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785 |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RFFM3482E RFFM3482ESR RFFM3482ETR13X RFFM3482ESQ |
2.4GHz TO 2.5GHz SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFS44V2735 |
2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7785A C397785A |
From old datasheet system
7.7 - 8.5GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| B69842N5807A150 |
Microwave Ceramics and Modules 2 Pole Filter for W-LAN 5GHz /5.725-5.875 Band
|
EPCOS AG
EPCOS[EPCOS]
|
| 55GN01CA 55GN01CA12 ENA1111A |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| LT5515 |
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
|
Linear
|
| 55GN01FA12 ENA1113A 55GN01FA |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single SSFP
UHF Wide-band Low-noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
