| PART |
Description |
Maker |
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA1514K |
High breakdown voltage.Collector-base voltage VCBO -120 V
|
TY Semiconductor Co., Ltd
|
| 2SA1179 |
High breakdown voltage Collector-base voltage VCBO -55 V
|
TY Semiconductor Co., Ltd
|
| 2SC4080 |
High Ft High breakdown voltage Small reverse transfer capacitance excellent
|
TY Semiconductor Co., Ltd
|
| 1PS76SB62 |
Ultra high swiching speed Very low capacitance High breakdown voltage
|
TY Semiconductor Co., L...
|
| 2SD2211 |
High breakdown voltage Low collector output capacitance High transition frequency
|
TY Semiconductor Co., L...
|
| 2SC5145 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5035 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SC5036 2SC5036A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
PANASONIC[Panasonic Semiconductor]
|
