PART |
Description |
Maker |
HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器(的CMOS 256K × 16位快速页面存取模式动态内存) CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited Fujitsu, Ltd.
|
KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
MB8264A MB8264A-15 MB8264A-10 MB8264A-12 |
MOS 65536-bit Dynamic Random Access Memory
|
Fujitsu Microelectronics Fujitsu Media Devices Limited Fujitsu Component Limited.
|
AK481024G AK481024S |
1,048,576 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
AK5816384 |
1,048,576 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
TMS626162A |
524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY
|
http://
|
AK5328192WP-60 |
8,388,608 by 32 Bit CMOS Dynamic Random Access Memory
|
http:// ACCUTEK MICROCIRCUIT CORPORATION
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
AK5362048W |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|