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GT30J324 - Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications

GT30J324_851938.PDF Datasheet

 
Part No. GT30J324
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications

File Size 164.69K  /  7 Page  

Maker


TOSHIBA[Toshiba Semiconductor]



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Part: GT30J322
Maker: TOS
Pack: TO-3P
Stock: Reserved
Unit price for :
    50: $1.67
  100: $1.58
1000: $1.50

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