| PART |
Description |
Maker |
| MCM69P536C MCM69P536CTQ4 MCM69P536CTQ4.5 MCM69P536 |
32K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
32K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM 32K X 36 CACHE SRAM, 4.5 ns, PQFP100
32K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM 32K X 36 CACHE SRAM, 4 ns, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| IDT70V9379L IDT70V9379L9PRF IDT70V9379L12PRF IDT70 |
32K x 18 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
IDT[Integrated Device Technology]
|
| CY7C1215F-166AC CY7C1215F-133AC CY7C1215F |
1-Mb (32K x 32) Pipelined Sync SRAM
|
CYPRESS[Cypress Semiconductor]
|
| IDT709079S9PFI IDT709079L IDT709079L12PF IDT709079 |
From old datasheet system
HIGH-SPEED 32K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM
32K x 8 Sync, Dual-Port RAM, PipeLined/Flow-Through
|
IDT[Integrated Device Technology]
|
| IDT70V9279S_L IDT70V9279S IDT70V9279L12PRFI IDT70V |
HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
32K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
|
IDT
Integrated Device Technology
|
| CY7C1218H CY7C1218H-133AXI |
1-Mbit (32K x36) Pipelined Sync SRAM
|
Cypress Semiconductor Corp.
|
| ZGP323HEP2032C ZGP323HSP4032C ZGP323HEH4832C ZGP32 |
IC Z8 GP MCU 32K OTP 20DIP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP20
IC Z8 GP MCU 32K OTP 40DIP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP40
IC Z8 GP MCU 32K OTP 48SSOP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDSO48
IC Z8 GP MCU 32K OTP 28SOIC 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDSO28
IC Z8 GP MCU 32K OTP 28SSOP 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDSO28
|
ZiLOG, Inc.
|
| K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes
256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| X28HC256P-12 X28HC256P-15 X28HC256J-90 X28HC256S-1 |
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 150 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 120 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CQCC32
SWITCH SLIDE 2MM HORIZONTAL SMD 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDIP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDSO28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PDIP28
RACK DESK SOLID BLACK 1.75X19X8,1 32K X 8 EEPROM 5V, 70 ns, CPGA28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CPGA28
Continuity Tester RoHS Compliant: NA 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, PQCC32
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 90 ns, CDFP28
5 Volt, Byte Alterable EEPROM 32K X 8 EEPROM 5V, 70 ns, CQCC32
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 1000uF; Voltage: 50V; Case Size: 12.5x25 mm; Packaging: Bulk
|
Intersil, Corp.
Intersil Corporation
|
|
