| PART |
Description |
Maker |
| IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Semiconductors
Vishay Siliconix
|
| NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A.
Silicon Controlled Rectifier (SCR) 5 Amp
|
NTE[NTE Electronics]
|
| TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM)
Silicon controlled rectifiers
From old datasheet system
|
ST Microelectronics
|
| 2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase)
Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation
Microsemi, Corp.
|
| CBR3A-P060 CBR10A-J080 CBR6A-080 CBR10A-J020 CBR10 |
Bridge Rectifiers, Controlled Avalanche 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers, Controlled Avalanche 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
Bridge Rectifiers/ Controlled Avalanche
Leaded Bridge Rectifier Controlled Avalanche
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system
Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE
Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
| CS3-16N CS3-16D CS3-16M |
SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS 16 A, 800 V, SCR, TO-3
SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS 16 A, 400 V, SCR, TO-3
SILICON CONTROLLED RECTIFIER 16 AMP, 200 THRU 800 VOLTS 16 A, 600 V, SCR, TO-3
|
Central Semiconductor, Corp.
|
| MCK100-6 |
400V Vdrm 0.8A Sensitive Gate Silicon Controlled Rectifier, 1.7@1AV Peak On-State Voltage, 500V/μs Rise of Off-State Voltage
Sensitive Gate Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
|
