PART |
Description |
Maker |
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五(巴西)直| 4A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五(巴西)直| 2.5AI(四 TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五(巴西)直| 6A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五(巴西)直|甲(丁)
|
Samwha Electronics International Rectifier, Corp.
|
MP4513 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
OMD60L60FL OMD150N06FL |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五(巴西)国际消费电子展| 75A条一c TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
|
Unisonic Technologies Co., Ltd.
|
BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
6DI100A-050 |
POWER TRANSISTOR MODULE 100 A, 600 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
KD224575 |
Dual Darlington Transistor Module (75 Amperes/600 Volts) 75 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C) TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
CZ300R10KN CC150R10KN CC50R10KN |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 880V V(BR)CEO | 300A I(C) 晶体管|晶体管电源模块|达林顿| 880V五(巴西)总裁| 300我(丙) TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 150A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五(巴西)总裁| 150A一(c TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 880V V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 880V五(巴西)总裁| 50A条一(c
|
ON Semiconductor RECOM Electronic GmbH
|
2DI150D-050 |
Power transistor module for high power switching, AC and DC motor control applications From old datasheet system
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
MP4507 |
Power Transistor Module
|
Toshiba
|
1DI400A-120 |
POWER TRANSISTOR MODULE
|
http:// FUJI[Fuji Electric]
|