PART |
Description |
Maker |
TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM 16兆比特(2米x 8位)的CMOS NAND闪存E2PROM
|
Toshiba Corporation Toshiba, Corp.
|
IDT72235LB IDT72205LB IDT72225LB IDT72215LB IDT722 |
4K x 18 SyncFIFO, 5.0V 2K x 18 SyncFIFO, 5.0V 1K x 18 SyncFIFO, 5.0V 512 x 18 SyncFIFO, 5.0V 256 x 18 SyncFIFO, 5.0V CMOS SyncFIFO? Low Voltage 28-Bit Flat Panel Display Link Serializers; Package: TSSOP; No of Pins: 56; Container: Tape & Reel TUBING, TFE 20GA TUBE, THN, TEF, NAT, 24AWG 256 X 18 OTHER FIFO, 10 ns, PQFP64 PLASTIC, TQFP-64 256 X 18 OTHER FIFO, 15 ns, PQFP64 PLASTIC, TQFP-64 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 256 X 18 OTHER FIFO, 15 ns, PQFP64 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 512 X 18 OTHER FIFO, 15 ns, PQFP64 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 2K X 18 OTHER FIFO, 15 ns, PQFP64 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 1K X 18 OTHER FIFO, 15 ns, PQFP64 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 4K X 18 OTHER FIFO, 15 ns, PQFP64 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 的CMOS SyncFIFOO 256 × 1812 × 18024 × 18048 × 18096 × 18 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 1K X 18 OTHER FIFO, 6.5 ns, PQCC68 CMOS SyncFIFOO 256 x 18, 512 x 18, 1024 x 18, 2048 x 18 and 4096 x 18 2K X 18 OTHER FIFO, 6.5 ns, PQFP64
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http:// IDT[Integrated Device Technology] Integrated Device Technology, Inc. Cypress Semiconductor, Corp. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Technolog...
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TC58NS256BDC |
256 MBit CMOS NAND EPROM
|
Toshiba
|
AM42DL3244GB25IT AM42DL3234GB25IT AM42DL3224GB25IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位56亩16位),静态存储器
|
Advanced Micro Devices, Inc.
|
SST30VR021 SST30VR021-500-C-U1 SST30VR021-500-C-WH |
2 Mbit ROM SRAM T1/E1 Transformer 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SPECIALTY MEMORY CIRCUIT, PDSO32 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo SPECIALTY MEMORY CIRCUIT, UUC 2 Mbit ROM 1 Mbit / 2Mbit / 256 Kbit SRAM ROM/RAM Combo 2兆光兆位/ 2Mbit 256千位的SRAM ROM / RAM内存组合
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
M36L0T8060B1 |
(M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM
|
ST Microelectronics
|
AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位).8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位)1.8伏的CMOS只,同时操作,页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位),静态存储器 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics ST Microelectronics
|
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