| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC379B |
Variable Capacitance Diode for VCO
|
HITACHI[Hitachi Semiconductor]
|
| HVL385C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVC397C |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVD380B |
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVL381C |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD381B |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVD369B |
Variable Capacitance Diode for VCO
|
Guangdong Kexin Industrial Co.,Ltd
|
| RKV608KP |
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
