| PART |
Description |
Maker |
| 1011LD110 |
RF Power Transistors: AVIONICS
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
ADPOW[Advanced Power Technology]
|
| 0912-25 |
TRANSISTOR | BJT | NPN | 2.5A I(C) | FO-67VAR
25 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
RF Power Transistors: AVIONICS
|
GHZTECH[GHz Technology]
Advanced Power Technology
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| ITC1000 |
RF Power Transistors: AVIONICS
1000 WATT, 50V, Pulsed Avionics 1030 MHz
1000 WATT 50V Pulsed Avionics 1030 MHz
|
Advanced Power Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| MAPRST1030-1KS MAPRST1030-1KS-15 |
Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10μs Pulse, 1% Duty
Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10楼矛s Pulse, 1% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| PH1090-350L |
Avionics Pulsed Power Transistor
|
M/A-COM Technology Solutions, Inc.
|
| 1011LD110A |
Pulsed Power Avionics 960-1215 MHz (Si)
|
Microsemi
|
| HVV1011-300 HVV1011-300-EK |
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| PH1090-550S |
Avionics Pulsed Power Transistor - 550 Watts,1030-1090 MHz, 10us Pulse, 1% Duty
|
Tyco Electronics
|
| MAPR-001011-850S00 |
AVIONICS PULSED POWER TRANSISTOR 850 WATTS, 1025-1150 MHz, 10us PULSE, 1% DUTY
|
MACOM[Tyco Electronics]
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
