PART |
Description |
Maker |
DIM200PHM33-A000 |
Half Bridge IGBT Module Preliminary Information 200 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
|
CM50DY12E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 50A条一(c
|
Mitsubishi Electric, Corp.
|
VII125-12G4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 125A条一(c
|
IXYS, Corp.
|
CM200DY24E |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
|
Vishay Intertechnology, Inc.
|
CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一(c
|
Toshiba, Corp.
|
2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
SIM300D06AV3 |
“HALF-BRIDGE IGBT MODULE “HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
SIM75D12SV1 |
“HALF-BRIDGE IGBT MODULE “HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
BSM150GB120DN2E3166 150B12E2 C67076-A2112-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
BSM200GB120DN2 200B12N2 C67070-A2300-A70 |
From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|